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IXA30PG1200DHGLB

EXSHINE Part Number:EX-IXA30PG1200DHGLB
Manufacturer Part Number:IXA30PG1200DHGLB
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT PHASELEG 1200V 30A SMPD
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXA30PG1200DHGLB
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXA30PG1200DHGLB
In stock: 41830 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXA30PG1200DHGLB online

US$ 16.667

Reference Marketing Price: US$ 16.667

Our Best Price: N/A (Email us)

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Multiples:1

45+:
$16.667
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
Supplier Device Package ISOPLUS-SMPD™.B
Series -
Power - Max 150W
Package / Case 9-SMD Module
Operating Temperature -55°C ~ 150°C (TJ)
NTC Thermistor No
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXA30PG1200DHGLB
Input Capacitance (Cies) @ Vce -
Input Standard
IGBT Type PT
Expanded Description IGBT Array PT Half Bridge 1200V 43A 150W Surface Mount ISOPLUS-SMPD™.B
Description IGBT PHASELEG 1200V 30A SMPD
Current - Collector Cutoff (Max) 2.1mA
Current - Collector (Ic) (Max) 43A
Configuration Half Bridge

Others

Standard Package 45

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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