EPC2015C

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EPC2015C

EXSHINE Part Number:EX-EPC2015C
Manufacturer Part Number:EPC2015C
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 40V 33A BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2015C Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2015C
In stock: 41650 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2015C online

US$ 2.318

Reference Marketing Price: US$ 2.318

Our Best Price: N/A (Email us)

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Multiples:1

2500+:
$2.318
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 9mA
Vgs (Max) +6V, -4V
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 4 mOhm @ 33A, 5V
Power Dissipation (Max) -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-1083-2
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2015C
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 40V 53A (Ta) Surface Mount Die
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 40V
Description TRANS GAN 40V 33A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 53A (Ta)

Others

Standard Package 2,500
Other Names 917-1083-2

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Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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