EXSHINE Part Number: | EX-EPC2016C |
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Manufacturer Part Number: | EPC2016C |
Manufacturer / Brand: | EPC |
Brief Description: | TRANS GAN 100V 18A BUMPED DIE |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Condition: | New and unused, Original |
Datasheet Download: | EPC2016C |
Application: | - |
Weight: | - |
Alternative Replacement: | - |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
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Vgs (Max) | +6V, -4V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
Power Dissipation (Max) | - |
Packaging | Tape & Reel (TR) |
Package / Case | Die |
Other Names | 917-1080-2 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 14 Weeks |
Manufacturer Part Number | EPC2016C |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Expanded Description | N-Channel 100V 18A (Ta) Surface Mount Die |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 100V |
Description | TRANS GAN 100V 18A BUMPED DIE |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Standard Package | 2,500 |
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Other Names | 917-1080-2 |
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Western Union Receiving: 1-2 hours. |
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MoneyGram Receiving: 1-2 hours. |
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Alipay Receiving: immediately. |
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.