EPC2022

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EPC2022

EXSHINE Part Number:EX-EPC2022
Manufacturer Part Number:EPC2022
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 100V 3MOHM BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2022 Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2022
In stock: 53830 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2022 online

US$ 5.013

Reference Marketing Price: US$ 5.013

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

500+:
$5.013
1000+:
$4.366
  • Description
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  • Packaging

Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 12mA
Vgs (Max) +6V, -4V
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 25A, 5V
Power Dissipation (Max) -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-1133-2
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number EPC2022
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs -
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 100V 60A (Ta) Surface Mount Die
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Description TRANS GAN 100V 3MOHM BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 60A (Ta)

Others

Other Names 917-1133-2
Standard Package 500

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 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

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 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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