EXSHINE Part Number: | EX-EPC2023ENG |
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Manufacturer Part Number: | EPC2023ENG |
Manufacturer / Brand: | EPC |
Brief Description: | TRANS GAN 30V 60A BUMPED DIE |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Condition: | New and unused, Original |
Datasheet Download: | EPC2023 Datasheet Preliminary |
Application: | - |
Weight: | - |
Alternative Replacement: | - |
Vgs(th) (Max) @ Id | 2.5V @ 20mA |
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Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 40A, 5V |
Power Dissipation (Max) | - |
Packaging | Tray |
Package / Case | Die |
Other Names | 917-EPC2023ENG EPC2023ENGRC2 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 22 Weeks |
Manufacturer Part Number | EPC2023ENG |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Expanded Description | N-Channel 30V 60A (Ta) Surface Mount Die |
Drain to Source Voltage (Vdss) | 30V |
Description | TRANS GAN 30V 60A BUMPED DIE |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Other Names | 917-EPC2023ENG EPC2023ENGRC2 |
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Standard Package | 10 |
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T/T (Bank Transfer) Receiving: 1-4 days. |
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Paypal Receiving: immediately. |
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Western Union Receiving: 1-2 hours. |
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MoneyGram Receiving: 1-2 hours. |
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Alipay Receiving: immediately. |
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.