Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2032ENGR
Photo for reference only Contact us for more images
EPC2032ENGR
| EXSHINE Part Number: | EX-EPC2032ENGR |
|---|---|
| Manufacturer Part Number: | EPC2032ENGR |
| Manufacturer / Brand: | EPC |
| Brief Description: | TRANS GAN 100V 48A BUMPED DIE |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | EPC2032 Datasheet |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
EPC2032ENGR
In stock: 89355 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 89355 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |
|---|---|
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 5V |
| Power Dissipation (Max) | - |
| Packaging | Tray |
| Package / Case | Die |
| Other Names | 917-EPC2032ENGR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | EPC2032ENGR |
| Input Capacitance (Ciss) (Max) @ Vds | 1530pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 100V 48A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss) | 100V |
| Description | TRANS GAN 100V 48A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
Others
| Other Names | 917-EPC2032ENGR |
|---|---|
| Standard Package | 10 |
You can choose the below payment options. Please contact our sales team if you have any questions.
|
|
T/T (Bank Transfer) Receiving: 1-4 days. |
|
|
Paypal Receiving: immediately. |
|
|
Western Union Receiving: 1-2 hours. |
|
|
MoneyGram Receiving: 1-2 hours. |
|
|
Alipay Receiving: immediately. |
You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.
 |
DHL EXPRESS Delivery time: 1-3 days. |
 |
FEDEX EXPRESS Delivery time: 1-3 days. |
 |
UPS EXPRESS Delivery time: 2-4 days. |
 |
TNT EXPRESS Delivery time: 3-6 days. |
 |
EMS EXPRESS Delivery time: 7-10 days. |
Related Product
-
PictureMfg. Part NumberManufacturersBrief DescriptionDatasheetIn StockItem PriceOrder Online -
EPC2033ENGRTEPCTRANS GAN 150V 31A BUMPED DIEViewUS$ 4.465Inquiry -
EPC2029EPCTRANS GAN 80V 31A BUMPED DIEDownloadViewUS$ 3.629Inquiry -
EPC2032ENGRTEPCTRANS GAN 100V 48A BUMPED DIEDownloadViewUS$ 4.568Inquiry -
EPC2031ENGREPCTRANS GAN 60V 31A BUMPED DIEDownloadViewInquiry -
EPC2035EPCTRANS GAN 60V 1A BUMPED DIEDownloadViewUS$ 0.307Inquiry -
EPC2029ENGRTEPCTRANS GAN 80V 31A BUMPED DIEDownloadViewUS$ 7.823Inquiry -
EPC2034ENGREPCTRANS GAN 200V 31A BUMPED DIEDownloadViewInquiry -
EPC2031ENGRTEPCMOSFET NCH 60V 31A DIEDownloadViewUS$ 3.572Inquiry -
EPC2030ENGREPCTRANS GAN 40V 31A BUMPED DIEDownloadViewUS$ 5.064Inquiry -
EPC2034ENGRTEPCTRANS GAN 200V 31A BUMPED DIEDownloadViewUS$ 5.957Inquiry -
EPC2030ENGRTEPCMOSFET NCH 40V 31A DIEDownloadViewUS$ 3.631Inquiry -
EPC2036ENGRTEPCMOSFET N-CH 100V 1.7A DIEViewUS$ 0.387Inquiry -
EPC2036EPCTRANS GAN 100V 1A BUMPED DIEDownloadViewUS$ 0.321Inquiry -
EPC2034EPCTRANS GAN 200V 48A BUMPED DIEDownloadViewUS$ 4.593Inquiry -
EPC2029ENGREPCTRANS GAN 80V 31A BUMPED DIEDownloadViewInquiry -
EPC2025ENGREPCTRANS GAN 300V 4A BUMPED DIEDownloadViewUS$ 7.615Inquiry -
EPC2033ENGREPCTRANS GAN 150V 31A BUMPED DIEViewInquiry -
EPC2032EPCTRANS GAN 100V 48A BUMPED DIEDownloadViewUS$ 3.7Inquiry -
EPC2033EPCTRANS GAN 150V 7MOHM BUMPED DIEViewUS$ 4.465Inquiry -
EPC2025EPCTRANS GAN 300V 150MO BUMPED DIEDownloadViewUS$ 2.778Inquiry
Distributor of EPC
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.