EPC2100ENG

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EPC2100ENG

EXSHINE Part Number:EX-EPC2100ENG
Manufacturer Part Number:EPC2100ENG
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 2N-CH 30V BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2100 Preliminary Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2100ENG
In stock: 59748 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 4mA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 8 mOhm @ 25A, 5V
Power - Max -
Packaging Tray
Package / Case Die
Other Names 917-EPC2100ENG
EPC2100ENGR_H1
EPC2100ENGRH1
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2100ENG
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 15V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 2 N-Channel (Half Bridge) 30V 9.5A, 38A Surface Mount Die
Drain to Source Voltage (Vdss) 30V
Description TRANS GAN 2N-CH 30V BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A

Others

Standard Package 10
Other Names 917-EPC2100ENG

EPC2100ENGR_H1

EPC2100ENGRH1

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

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 Delivery time: 1-3 days.
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 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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