EXSHINE Part Number: | EX-EPC2107ENGRT |
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Manufacturer Part Number: | EPC2107ENGRT |
Manufacturer / Brand: | EPC |
Brief Description: | TRANS GAN 3N-CH 100V BUMPED DIE |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Condition: | New and unused, Original |
Datasheet Download: | EPC2107 Preliminary Datasheet |
Application: | - |
Weight: | - |
Alternative Replacement: | - |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
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Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V |
Power - Max | - |
Packaging | Tape & Reel (TR) |
Package / Case | Die |
Other Names | 917-EPC2107ENGRTR |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | EPC2107ENGRT |
Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V |
FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature | GaNFET (Gallium Nitride) |
Expanded Description | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount Die |
Drain to Source Voltage (Vdss) | 100V |
Description | TRANS GAN 3N-CH 100V BUMPED DIE |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Other Names | 917-EPC2107ENGRTR |
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Standard Package | 2,500 |
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T/T (Bank Transfer) Receiving: 1-4 days. |
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Paypal Receiving: immediately. |
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Western Union Receiving: 1-2 hours. |
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MoneyGram Receiving: 1-2 hours. |
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Alipay Receiving: immediately. |
DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.