EPC9010

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EPC9010

EXSHINE Part Number:EX-EPC9010
Manufacturer Part Number:EPC9010
Manufacturer / Brand:EPC
Brief Description:BOARD DEV FOR EPC2016
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC9010 Quick Start Guide
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC9010
In stock: 40390 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC9010 online

US$ 90

Reference Marketing Price: US$ 90

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

40+:
$90.00
  • Description
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Product Parameter

Utilized IC / Part EPC2016
Supplied Contents Board
Series eGaN®
Secondary Attributes -
Primary Attributes 100V, 7A Max Output GaNFET Capability
Other Names 917-1031
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Manufacturer Part Number EPC9010
Main Purpose Power Management, Half H-Bridge Driver (External FET)
Expanded Description EPC2016 eGaN® Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board
Embedded No
Description BOARD DEV FOR EPC2016

Others

Other Names 917-1031
Standard Package 40

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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