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Home > Products > RF/IF and RFID > RF Accessories > GAN FET BOOK-WIPO
GAN FET BOOK-WIPO

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GAN FET BOOK-WIPO

EXSHINE Part Number:EX-GAN FET BOOK-WIPO
Manufacturer Part Number:GAN FET BOOK-WIPO
Manufacturer / Brand:EPC
Brief Description:TEXT WIRELESS POWER HANDBOOK
Lead Free Status / RoHS Status:Lead free by exemption / RoHS compliant by exemption
Condition:New and unused, Original
Datasheet Download:GAN FET BOOK-WIPO~
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GAN FET BOOK-WIPO
In stock: 35120 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order GAN FET BOOK-WIPO online

US$ 0

Reference Marketing Price: N/A

Our Best Price: N/A (Email us)

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Multiples:1

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Product Parameter

Series -
Other Names 917-1098
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GAN FET BOOK-WIPO
For Use With/Related Products -
Description TEXT WIRELESS POWER HANDBOOK
Accessory Type Guide

Others

Standard Package 1
Other Names 917-1098

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.
 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


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Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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