GP1M003A050PG

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GP1M003A050PG

EXSHINE Part Number:EX-GP1M003A050PG
Manufacturer Part Number:GP1M003A050PG
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 500V 2.5A IPAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M003A050CG, PG
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M003A050PG
In stock: 11844000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order GP1M003A050PG online

US$ 0.324

Reference Marketing Price: US$ 0.324

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

7200+:
$0.324
  • Description
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package I-Pak
Series -
Rds On (Max) @ Id, Vgs 2.8 Ohm @ 1.25A, 10V
Power Dissipation (Max) 52W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M003A050PG
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 500V 2.5A (Tc) 52W (Tc) Through Hole I-Pak
Drain to Source Voltage (Vdss) 500V
Description MOSFET N-CH 500V 2.5A IPAK
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)

Others

Standard Package 7,200

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

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 Delivery time: 1-3 days.
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 UPS EXPRESS
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 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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