GP1M005A050FSH

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GP1M005A050FSH

EXSHINE Part Number:EX-GP1M005A050FSH
Manufacturer Part Number:GP1M005A050FSH
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 500V 4A TO220F
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M005A050HS, FSH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M005A050FSH
In stock: 63108000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.462

Reference Marketing Price: US$ 0.462

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$0.462
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Product Parameter

Vgs(th) (Max) @ Id 3.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F
Series -
Rds On (Max) @ Id, Vgs 1.85 Ohm @ 2A, 10V
Power Dissipation (Max) 32W (Tc)
Packaging Tube
Package / Case TO-220-3 Full Pack
Other Names 1560-1159-1
1560-1159-1-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M005A050FSH
Input Capacitance (Ciss) (Max) @ Vds 602pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 500V 4A (Tc) 32W (Tc) Through Hole TO-220F
Drain to Source Voltage (Vdss) 500V
Description MOSFET N-CH 500V 4A TO220F
Current - Continuous Drain (Id) @ 25°C 4A (Tc)

Others

Other Names 1560-1159-1

1560-1159-1-ND
Standard Package 1

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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