GP1M011A050H

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GP1M011A050H

EXSHINE Part Number:EX-GP1M011A050H
Manufacturer Part Number:GP1M011A050H
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 500V 11A TO220
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M011A050(F)H
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M011A050H
In stock: 95113000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.999

Reference Marketing Price: US$ 0.999

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Multiples:1

2000+:
$0.999
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 670 mOhm @ 5.5A, 10V
Power Dissipation (Max) 158W (Tc)
Packaging Tube
Package / Case TO-220-3
Other Names 1560-1179-1
1560-1179-1-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M011A050H
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 500V 11A (Tc) 158W (Tc) Through Hole TO-220
Drain to Source Voltage (Vdss) 500V
Description MOSFET N-CH 500V 11A TO220
Current - Continuous Drain (Id) @ 25°C 11A (Tc)

Others

Standard Package 1
Other Names 1560-1179-1

1560-1179-1-ND

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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