GP2M010A065F

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GP2M010A065F

EXSHINE Part Number:EX-GP2M010A065F
Manufacturer Part Number:GP2M010A065F
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 650V 9.5A TO220F
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP2M010A065F, H
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP2M010A065F
In stock: 95840 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.256

Reference Marketing Price: US$ 1.256

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2000+:
$1.256
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F
Series -
Rds On (Max) @ Id, Vgs 820 mOhm @ 4.75A, 10V
Power Dissipation (Max) 52W (Tc)
Packaging Tube
Package / Case TO-220-3 Full Pack
Other Names 1560-1207-1
1560-1207-1-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP2M010A065F
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 650V 9.5A (Tc) 52W (Tc) Through Hole TO-220F
Drain to Source Voltage (Vdss) 650V
Description MOSFET N-CH 650V 9.5A TO220F
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)

Others

Standard Package 1
Other Names 1560-1207-1

1560-1207-1-ND

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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