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MMIX4G20N250

EXSHINE Part Number:EX-MMIX4G20N250
Manufacturer Part Number:MMIX4G20N250
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MMIX4G20N250
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MMIX4G20N250
In stock: 37360 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MMIX4G20N250 online

US$ 58.464

Reference Marketing Price: US$ 58.464

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

20+:
$58.464
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 2500V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 20A
Supplier Device Package SMPD
Series -
Power - Max 100W
Package / Case 24-SMD Module, 9 Leads
Operating Temperature -55°C ~ 150°C (TJ)
NTC Thermistor No
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number MMIX4G20N250
Input Standard
IGBT Type -
Expanded Description IGBT Array Full Bridge 2500V 23A 100W Surface Mount SMPD
Description MOSFET N-CH
Current - Collector Cutoff (Max) 10µA
Current - Collector (Ic) (Max) 23A
Configuration Full Bridge

Others

Standard Package 20

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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 Western Union
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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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