IPI08CNE8N G

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IPI08CNE8N G

EXSHINE Part Number:EX-IPI08CNE8N G
Manufacturer Part Number:IPI08CNE8N G
Manufacturer / Brand:Infineon Technologies
Brief Description:MOSFET N-CH 85V 95A TO262-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IP(B,I,P)08CNE8N G
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IPI08CNE8N G
In stock: 59920 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Vgs(th) (Max) @ Id 4V @ 130µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.4 mOhm @ 95A, 10V
Power Dissipation (Max) 167W (Tc)
Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names SP000208927
SP000680708
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IPI08CNE8N G
Input Capacitance (Ciss) (Max) @ Vds 6690pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 99nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 85V 95A (Tc) 167W (Tc) Through Hole PG-TO262-3
Drain to Source Voltage (Vdss) 85V
Description MOSFET N-CH 85V 95A TO262-3
Current - Continuous Drain (Id) @ 25°C 95A (Tc)

Others

Other Names SP000208927

SP000680708
Standard Package 500

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