HN3C51F-GR(TE85L,F

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HN3C51F-GR(TE85L,F

EXSHINE Part Number:EX-HN3C51F-GR(TE85L,F
Manufacturer Part Number:HN3C51F-GR(TE85L,F
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS 2NPN 120V 0.1A SM6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN3C51F
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN3C51F-GR(TE85L,F
In stock: 72164 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transistor Type 2 NPN (Dual)
Supplier Device Package SM6
Series -
Power - Max 300mW
Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457
Other Names HN3C51F-GR(TE85L,F)
HN3C51F-GR(TE85LF)TR
HN3C51F-GR(TE85LF)TR-ND
HN3C51F-GR(TE85LFTR
HN3C51F-GRTE85LF
HN3C51FGR(TE85LFTR
HN3C51FGR(TE85LFTR-ND
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HN3C51F-GR(TE85L,F
Frequency - Transition 100MHz
Expanded Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Description TRANS 2NPN 120V 0.1A SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

Others

Other Names HN3C51F-GR(TE85L,F)

HN3C51F-GR(TE85LF)TR

HN3C51F-GR(TE85LF)TR-ND

HN3C51F-GR(TE85LFTR

HN3C51F-GRTE85LF

HN3C51FGR(TE85LFTR

HN3C51FGR(TE85LFTR-ND
Standard Package 3,000

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Distributor of Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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