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ALD212908PAL
| EXSHINE Part Number: | EX-ALD212908PAL |
|---|---|
| Manufacturer Part Number: | ALD212908PAL |
| Manufacturer / Brand: | Advanced Linear Devices, Inc. |
| Brief Description: | MOSFET 2N-CH 10.6V 0.08A 8DIP |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | ALD212908 |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
ALD212908PAL
In stock: 21650 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 21650 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 20mV @ 10µA |
|---|---|
| Supplier Device Package | 8-PDIP |
| Series | EPAD®, Zero Threshold™ |
| Rds On (Max) @ Id, Vgs | - |
| Power - Max | 500mW |
| Packaging | Tube |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 10 Weeks |
| Manufacturer Part Number | ALD212908PAL |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Type | 2 N-Channel (Dual) Matched Pair |
| FET Feature | Logic Level Gate |
| Expanded Description | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP |
| Drain to Source Voltage (Vdss) | 10.6V |
| Description | MOSFET 2N-CH 10.6V 0.08A 8DIP |
| Current - Continuous Drain (Id) @ 25°C | 80mA |
Others
| Standard Package | 50 |
|---|
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Distributor of Advanced Linear Devices Inc.
- Advanced Linear Devices, Inc., (ALD) develops and manufactures ultra-low-power, precision CMOS analog integrated circuits, related board level products and Energy Harvesting Modules and accessories incorporating the company's exclusive EPAD® technology. ALD's standard semiconductor products include a full complement of "best-of-breed" ultra-low-charge-injection low-voltage analog switches, dual-slope A/D converters and digital processors, precision voltage comparators, precision rail-to-rail CMOS operational amplifiers, and low-drift CMOS timers with high discharge output, as well as an extensive selection of enhancement, depletion, and zero-threshold mode EPAD matched small signal MOSFET arrays.