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EPC9067

EXSHINE Part Number:EX-EPC9067
Manufacturer Part Number:EPC9067
Manufacturer / Brand:EPC
Brief Description:BOARD DEV FOR EPC8009 65V EGAN F
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC8009 DatasheetEPC9067 Quick Start Guide~EPC9067 Quick Start Guide
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC9067
In stock: 8766 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC9067 online

US$ 158.13

Reference Marketing Price: US$ 158.13

Our Best Price: N/A (Email us)

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1+:
$158.13
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Product Parameter

Utilized IC / Part EPC8009
Supplied Contents Board
Series eGaN®
Secondary Attributes -
Primary Attributes -
Other Names 917-1144
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC9067
Main Purpose Power Management, H-Bridge Driver (External FET)
Expanded Description EPC8009 eGaN® Series Power Management, H-Bridge Driver (External FET) Evaluation Board
Embedded -
Description BOARD DEV FOR EPC8009 65V EGAN F

Others

Standard Package 1
Other Names 917-1144

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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