HGT1S10N120BNST

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HGT1S10N120BNST

EXSHINE Part Number:EX-HGT1S10N120BNST
Manufacturer Part Number:HGT1S10N120BNST
Manufacturer / Brand:Fairchild/ON Semiconductor
Brief Description:IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HGT(G,P)10N120BN, HGT1S10N120BNS
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HGT1S10N120BNST
In stock: 42150 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Test Condition 960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320µJ (on), 800µJ (off)
Supplier Device Package TO-263AB
Series -
Power - Max 298W
Packaging Original-Reel®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names HGT1S10N120BNSTDKR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Manufacturer Part Number HGT1S10N120BNST
Input Type Standard
IGBT Type NPT
Gate Charge 100nC
Expanded Description IGBT NPT 1200V 35A 298W Surface Mount TO-263AB
Description IGBT 1200V 35A 298W TO263AB
Current - Collector Pulsed (Icm) 80A
Current - Collector (Ic) (Max) 35A

Others

Other Names HGT1S10N120BNSTDKR
Standard Package 1

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Distributor of Fairchild/ON Semiconductor

- Fairchild is now part of ON Semiconductor
Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products across the entire voltage spectrum which means more choices for your designs. Together, we provide a stronger presence in the key markets of automotive, industrial and wireless, combined with increased technical and sales support.

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