1N8035-GA

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1N8035-GA

EXSHINE Part Number:EX-1N8035-GA
Manufacturer Part Number:1N8035-GA
Manufacturer / Brand:GeneSiC Semiconductor
Brief Description:DIODE SCHOTTKY 650V 14.6A TO276
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Condition:New and unused, Original
Datasheet Download:1N8035-GA
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
1N8035-GA
In stock: 6317 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 202.1

Reference Marketing Price: US$ 202.1

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Multiples:1

1+:
$202.10
10+:
$192.344
25+:
$185.376
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Product Parameter

Voltage - Forward (Vf) (Max) @ If 1.5V @ 15A
Voltage - DC Reverse (Vr) (Max) 650V
Supplier Device Package TO-276
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0ns
Packaging Tube
Package / Case TO-276AA
Other Names 1242-1122
1N8035GA
Operating Temperature - Junction -55°C ~ 250°C
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Manufacturer Part Number 1N8035-GA
Expanded Description Diode Silicon Carbide Schottky 650V 14.6A (DC) Surface Mount TO-276
Diode Type Silicon Carbide Schottky
Description DIODE SCHOTTKY 650V 14.6A TO276
Current - Reverse Leakage @ Vr 5µA @ 650V
Current - Average Rectified (Io) 14.6A (DC)
Capacitance @ Vr, F 1107pF @ 1V, 1MHz

Others

Other Names 1242-1122

1N8035GA
Standard Package 10

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Distributor of GeneSiC Semiconductor

- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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