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HTZ250G28K

EXSHINE Part Number:EX-HTZ250G28K
Manufacturer Part Number:HTZ250G28K
Manufacturer / Brand:IXYS Corporation
Brief Description:DIODE MODULE 28KV 2.7A
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HTZ250G Series
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HTZ250G28K
In stock: 3908 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order HTZ250G28K online

US$ 521.36

Reference Marketing Price: US$ 521.36

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$521.36
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Product Parameter

Voltage - Forward (Vf) (Max) @ If 32V @ 12A
Voltage - DC Reverse (Vr) (Max) 28000V (28kV)
Supplier Device Package Module
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Packaging Bulk
Package / Case Module
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HTZ250G28K
Expanded Description Diode Array 1 Pair Series Connection Standard 28000V (28kV) 2.7A Chassis Mount Module
Diode Type Standard
Diode Configuration 1 Pair Series Connection
Description DIODE MODULE 28KV 2.7A
Current - Reverse Leakage @ Vr 500µA @ 28000V
Current - Average Rectified (Io) (per Diode) 2.7A

Others

Standard Package 1

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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