IXFH60N65X2

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IXFH60N65X2

EXSHINE Part Number:EX-IXFH60N65X2
Manufacturer Part Number:IXFH60N65X2
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 650V 60A TO-247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXFH60N65X2 Preliminary
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXFH60N65X2
In stock: 29080 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXFH60N65X2 online

US$ 9.08

Reference Marketing Price: US$ 9.08

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$9.08
10+:
$8.174
25+:
$7.448
100+:
$6.721
250+:
$6.176
500+:
$5.631
1000+:
$4.905
  • Description
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Product Parameter

Vgs(th) (Max) @ Id 5.5V @ 4mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Series HiPerFET™
Rds On (Max) @ Id, Vgs 52 mOhm @ 30A, 10V
Power Dissipation (Max) 780W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXFH60N65X2
Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 650V 60A (Tc) 780W (Tc) Through Hole
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Description MOSFET N-CH 650V 60A TO-247
Current - Continuous Drain (Id) @ 25°C 60A (Tc)

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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