IXFN26N120P

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IXFN26N120P

EXSHINE Part Number:EX-IXFN26N120P
Manufacturer Part Number:IXFN26N120P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1200V 23A SOT-227B
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXFN26N120P
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXFN26N120P
In stock: 86990 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 41.053

Reference Marketing Price: US$ 41.053

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$41.053
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Product Parameter

Vgs(th) (Max) @ Id 6.5V @ 1mA
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-227B
Series Polar™
Rds On (Max) @ Id, Vgs 460 mOhm @ 13A, 10V
Power Dissipation (Max) 695W (Tc)
Packaging Tube
Package / Case SOT-227-4, miniBLOC
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXFN26N120P
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1200V (1.2kV) 23A 695W (Tc) Chassis Mount SOT-227B
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Description MOSFET N-CH 1200V 23A SOT-227B
Current - Continuous Drain (Id) @ 25°C 23A

Others

Standard Package 10

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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