IXFT4N100Q

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IXFT4N100Q

EXSHINE Part Number:EX-IXFT4N100Q
Manufacturer Part Number:IXFT4N100Q
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1000V 4A TO-268
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXF(H,T)4N100Q
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXFT4N100Q
In stock: 14660 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 6.458

Reference Marketing Price: US$ 6.458

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Multiples:1

30+:
$6.458
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 1.5mA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-268
Series HiPerFET™
Rds On (Max) @ Id, Vgs 3 Ohm @ 2A, 10V
Power Dissipation (Max) 150W (Tc)
Packaging Tube
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXFT4N100Q
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1000V (1kV) 4A (Tc) 150W (Tc) Surface Mount TO-268
Drain to Source Voltage (Vdss) 1000V (1kV)
Description MOSFET N-CH 1000V 4A TO-268
Current - Continuous Drain (Id) @ 25°C 4A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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