IXGQ20N120B

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IXGQ20N120B

EXSHINE Part Number:EX-IXGQ20N120B
Manufacturer Part Number:IXGQ20N120B
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1200V 40A 190W TO3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGQ20N120B(D1)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGQ20N120B
In stock: 94220 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGQ20N120B online

US$ 4.725

Reference Marketing Price: US$ 4.725

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$4.725
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Test Condition 960V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C 20ns/270ns
Switching Energy 2.1mJ (off)
Supplier Device Package TO-3P
Series -
Reverse Recovery Time (trr) 40ns
Power - Max 190W
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGQ20N120B
Input Type Standard
IGBT Type PT
Gate Charge 62nC
Expanded Description IGBT PT 1200V 40A 190W Through Hole TO-3P
Description IGBT 1200V 40A 190W TO3P
Current - Collector Pulsed (Icm) 100A
Current - Collector (Ic) (Max) 40A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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