IXGT20N100

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IXGT20N100

EXSHINE Part Number:EX-IXGT20N100
Manufacturer Part Number:IXGT20N100
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1000V 40A 150W TO268
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXG(H,T)20N100
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGT20N100
In stock: 20430 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGT20N100 online

US$ 9.579

Reference Marketing Price: US$ 9.579

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$9.579
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1000V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 800V, 20A, 47 Ohm, 15V
Td (on/off) @ 25°C 30ns/350ns
Switching Energy 3.5mJ (off)
Supplier Device Package TO-268
Series -
Power - Max 150W
Packaging Tube
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGT20N100
Input Type Standard
IGBT Type PT
Gate Charge 73nC
Expanded Description IGBT PT 1000V 40A 150W Surface Mount TO-268
Description IGBT 1000V 40A 150W TO268
Current - Collector Pulsed (Icm) 80A
Current - Collector (Ic) (Max) 40A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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