IXGX100N170

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IXGX100N170

EXSHINE Part Number:EX-IXGX100N170
Manufacturer Part Number:IXGX100N170
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1700V 170A 830W PLUS247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGN100N170
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGX100N170
In stock: 32940 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGX100N170 online

US$ 29.453

Reference Marketing Price: US$ 29.453

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$29.453
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Test Condition -
Td (on/off) @ 25°C -
Switching Energy -
Supplier Device Package PLUS247™-3
Series -
Power - Max 830W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGX100N170
Input Type Standard
IGBT Type NPT
Gate Charge 425nC
Expanded Description IGBT NPT 1700V 170A 830W Through Hole PLUS247™-3
Description IGBT 1700V 170A 830W PLUS247
Current - Collector Pulsed (Icm) 600A
Current - Collector (Ic) (Max) 170A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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