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IXTH48P20P
| EXSHINE Part Number: | EX-IXTH48P20P |
|---|---|
| Manufacturer Part Number: | IXTH48P20P |
| Manufacturer / Brand: | IXYS Corporation |
| Brief Description: | MOSFET P-CH 200V 48A TO-247 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | IXT(H,T)48P20P |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
IXTH48P20P
In stock: 31430 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 31430 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247 (IXTH) |
| Series | PolarP™ |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 500mA, 10V |
| Power Dissipation (Max) | 462W (Tc) |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 8 Weeks |
| Manufacturer Part Number | IXTH48P20P |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Expanded Description | P-Channel 200V 48A (Tc) 462W (Tc) Through Hole TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Description | MOSFET P-CH 200V 48A TO-247 |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
Others
| Standard Package | 30 |
|---|
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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Distributor of IXYS
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.