IXTN120P20T

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IXTN120P20T

EXSHINE Part Number:EX-IXTN120P20T
Manufacturer Part Number:IXTN120P20T
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET P-CH 200V 106A SOT-227
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXTN120P20T
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTN120P20T
In stock: 42910 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTN120P20T online

US$ 36.267

Reference Marketing Price: US$ 36.267

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20+:
$36.267
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-227B
Series TrenchP™
Rds On (Max) @ Id, Vgs 30 mOhm @ 60A, 10V
Power Dissipation (Max) 830W (Tc)
Packaging Tube
Package / Case SOT-227-4, miniBLOC
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXTN120P20T
Input Capacitance (Ciss) (Max) @ Vds 73000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
FET Type P-Channel
FET Feature -
Expanded Description P-Channel 200V 106A 830W (Tc) Chassis Mount SOT-227B
Drain to Source Voltage (Vdss) 200V
Description MOSFET P-CH 200V 106A SOT-227
Current - Continuous Drain (Id) @ 25°C 106A

Others

Standard Package 10

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 Delivery time: 1-3 days.
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 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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