IXTP1R6N100D2

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IXTP1R6N100D2

EXSHINE Part Number:EX-IXTP1R6N100D2
Manufacturer Part Number:IXTP1R6N100D2
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1000V 1.6A TO220AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(Y,A,P)1R6N100D2
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTP1R6N100D2
In stock: 57920 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.943

Reference Marketing Price: US$ 1.943

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$1.943
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Product Parameter

Vgs(th) (Max) @ Id -
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series -
Rds On (Max) @ Id, Vgs 10 Ohm @ 800mA, 0V
Power Dissipation (Max) 100W (Tc)
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTP1R6N100D2
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
FET Type N-Channel
FET Feature Depletion Mode
Expanded Description N-Channel 1000V (1kV) 1.6A (Tc) 100W (Tc) Through Hole TO-220AB
Drain to Source Voltage (Vdss) 1000V (1kV)
Description MOSFET N-CH 1000V 1.6A TO220AB
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)

Others

Standard Package 50

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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