IXTP2N100P

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IXTP2N100P

EXSHINE Part Number:EX-IXTP2N100P
Manufacturer Part Number:IXTP2N100P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1000V 2A TO-220
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(A,P,Y)2N100P
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTP2N100P
In stock: 12200 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTP2N100P online

US$ 2.231

Reference Marketing Price: US$ 2.231

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$2.231
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 100µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series Polar™
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V
Power Dissipation (Max) 86W (Tc)
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXTP2N100P
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1000V (1kV) 2A (Tc) 86W (Tc) Through Hole TO-220AB
Drain to Source Voltage (Vdss) 1000V (1kV)
Description MOSFET N-CH 1000V 2A TO-220
Current - Continuous Drain (Id) @ 25°C 2A (Tc)

Others

Standard Package 50

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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