IXTT100N25P

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IXTT100N25P

EXSHINE Part Number:EX-IXTT100N25P
Manufacturer Part Number:IXTT100N25P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 250V 100A TO-268
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(K,Q,T)100N25P
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTT100N25P
In stock: 48480 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 8.89

Reference Marketing Price: US$ 8.89

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30+:
$8.89
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-268
Series PolarHT™
Rds On (Max) @ Id, Vgs 24 mOhm @ 50A, 10V
Power Dissipation (Max) 600W (Tc)
Packaging Tube
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTT100N25P
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 250V 100A (Tc) 600W (Tc) Surface Mount TO-268
Drain to Source Voltage (Vdss) 250V
Description MOSFET N-CH 250V 100A TO-268
Current - Continuous Drain (Id) @ 25°C 100A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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