IXTX200N10L2

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IXTX200N10L2

EXSHINE Part Number:EX-IXTX200N10L2
Manufacturer Part Number:IXTX200N10L2
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 100V 200A PLUS247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXTK200N10L2
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTX200N10L2
In stock: 73740 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTX200N10L2 online

US$ 21.384

Reference Marketing Price: US$ 21.384

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30+:
$21.384
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 3mA
Technology MOSFET (Metal Oxide)
Supplier Device Package PLUS247™-3
Series Linear L2™
Rds On (Max) @ Id, Vgs 11 mOhm @ 100A, 10V
Power Dissipation (Max) 1040W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTX200N10L2
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole PLUS247™-3
Drain to Source Voltage (Vdss) 100V
Description MOSFET N-CH 100V 200A PLUS247
Current - Continuous Drain (Id) @ 25°C 200A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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