IXYH40N90C3

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IXYH40N90C3

EXSHINE Part Number:EX-IXYH40N90C3
Manufacturer Part Number:IXYH40N90C3
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 900V 105A 600W TO247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXYH40N90C3
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXYH40N90C3
In stock: 63930 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXYH40N90C3 online

US$ 5.032

Reference Marketing Price: US$ 5.032

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$5.032
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 900V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 450V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C 27ns/78ns
Switching Energy 1.9mJ (on), 1mJ (off)
Supplier Device Package TO-247 (IXYH)
Series GenX3™, XPT™
Power - Max 600W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXYH40N90C3
Input Type Standard
IGBT Type -
Gate Charge 74nC
Expanded Description IGBT 900V 105A 600W Through Hole TO-247 (IXYH)
Description IGBT 900V 105A 600W TO247
Current - Collector Pulsed (Icm) 200A
Current - Collector (Ic) (Max) 105A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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