IXYP20N65C3D1

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IXYP20N65C3D1

EXSHINE Part Number:EX-IXYP20N65C3D1
Manufacturer Part Number:IXYP20N65C3D1
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 650V 18A 50W TO220
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXY(P,A)20N65C3D1
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXYP20N65C3D1
In stock: 69700 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXYP20N65C3D1 online

US$ 2.52

Reference Marketing Price: US$ 2.52

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Multiples:1

50+:
$2.52
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 400V, 20A, 20 Ohm, 15V
Td (on/off) @ 25°C 19ns/80ns
Switching Energy 430µJ (on), 350µJ (off)
Supplier Device Package TO-220AB
Series GenX3™, XPT™
Reverse Recovery Time (trr) 135ns
Power - Max 200W
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number IXYP20N65C3D1
Input Type Standard
IGBT Type PT
Gate Charge 30nC
Expanded Description IGBT PT 650V 50A 200W Through Hole TO-220AB
Description IGBT 650V 18A 50W TO220
Current - Collector Pulsed (Icm) 105A
Current - Collector (Ic) (Max) 50A

Others

Standard Package 50

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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