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MIAA10WD600TMH

EXSHINE Part Number:EX-MIAA10WD600TMH
Manufacturer Part Number:MIAA10WD600TMH
Manufacturer / Brand:IXYS Corporation
Brief Description:MODULE IGBT CBI
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIAA10WD600TMH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIAA10WD600TMH
In stock: 94780 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIAA10WD600TMH online

US$ 29.856

Reference Marketing Price: US$ 29.856

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

20+:
$29.856
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 10A
Supplier Device Package MiniPack2
Series -
Power - Max 70W
Package / Case MiniPack2
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor Yes
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MIAA10WD600TMH
Input Capacitance (Cies) @ Vce 0.45nF @ 25V
Input Single Phase Bridge Rectifier
IGBT Type NPT
Expanded Description IGBT Module NPT Three Phase Inverter 600V 18A 70W Chassis Mount MiniPack2
Description MODULE IGBT CBI
Current - Collector Cutoff (Max) 600µA
Current - Collector (Ic) (Max) 18A
Configuration Three Phase Inverter

Others

Standard Package 20

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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