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MIEB101H1200EH

EXSHINE Part Number:EX-MIEB101H1200EH
Manufacturer Part Number:MIEB101H1200EH
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT MODULE 1200V 183A QUAD
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIEB101H1200EH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIEB101H1200EH
In stock: 1263 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIEB101H1200EH online

US$ 110.108

Reference Marketing Price: US$ 110.108

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$110.108
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Supplier Device Package E3
Series -
Power - Max 630W
Package / Case E3
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MIEB101H1200EH
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
Input Standard
IGBT Type -
Expanded Description IGBT Module Full Bridge Inverter 1200V 183A 630W Chassis Mount E3
Description IGBT MODULE 1200V 183A QUAD
Current - Collector Cutoff (Max) 300µA
Current - Collector (Ic) (Max) 183A
Configuration Full Bridge Inverter

Others

Standard Package 5

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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 Western Union
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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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