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MII300-12E4

EXSHINE Part Number:EX-MII300-12E4
Manufacturer Part Number:MII300-12E4
Manufacturer / Brand:IXYS Corporation
Brief Description:MOD IGBT NPT PHASE LEG Y3-LI
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MII300-12E4
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MII300-12E4
In stock: 68008 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 200A
Supplier Device Package Y3-Li
Series -
Power - Max 1100W
Package / Case Y3-Li
Operating Temperature -40°C ~ 150°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MII300-12E4
Input Capacitance (Cies) @ Vce 11nF @ 25V
Input Standard
IGBT Type NPT
Expanded Description IGBT Module NPT Half Bridge 1200V 280A 1100W Chassis Mount Y3-Li
Description MOD IGBT NPT PHASE LEG Y3-LI
Current - Collector Cutoff (Max) 3.3mA
Current - Collector (Ic) (Max) 280A
Configuration Half Bridge

Others

Standard Package 2

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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