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MIXA60WB1200TEH

EXSHINE Part Number:EX-MIXA60WB1200TEH
Manufacturer Part Number:MIXA60WB1200TEH
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT MODULE 1200V 60A
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIXA60WB1200TEH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIXA60WB1200TEH
In stock: 25960 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIXA60WB1200TEH online

US$ 95.072

Reference Marketing Price: US$ 95.072

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Supplier Device Package E3
Series -
Power - Max 290W
Package / Case E3
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor Yes
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number MIXA60WB1200TEH
Input Capacitance (Cies) @ Vce -
Input Three Phase Bridge Rectifier
IGBT Type PT
Expanded Description IGBT Module PT Three Phase Inverter with Brake 1200V 85A 290W Chassis Mount E3
Description IGBT MODULE 1200V 60A
Current - Collector Cutoff (Max) 500µA
Current - Collector (Ic) (Max) 85A
Configuration Three Phase Inverter with Brake

Others

Standard Package 5

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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