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MKI50-06A7

EXSHINE Part Number:EX-MKI50-06A7
Manufacturer Part Number:MKI50-06A7
Manufacturer / Brand:IXYS Corporation
Brief Description:MOD IGBT H-BRIDGE 600V 72A E2
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MKI50-06A7(T)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MKI50-06A7
In stock: 51110 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MKI50-06A7 online

US$ 53.438

Reference Marketing Price: US$ 53.438

Our Best Price: N/A (Email us)

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Multiples:1

6+:
$53.438
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Supplier Device Package E2
Series -
Power - Max 225W
Package / Case E2
Operating Temperature -40°C ~ 150°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number MKI50-06A7
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
Input Standard
IGBT Type NPT
Expanded Description IGBT Module NPT Full Bridge Inverter 600V 72A 225W Chassis Mount E2
Description MOD IGBT H-BRIDGE 600V 72A E2
Current - Collector Cutoff (Max) 600µA
Current - Collector (Ic) (Max) 72A
Configuration Full Bridge Inverter

Others

Standard Package 6

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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