IPB049N08N5ATMA1

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IPB049N08N5ATMA1

EXSHINE Part Number:EX-IPB049N08N5ATMA1
Manufacturer Part Number:IPB049N08N5ATMA1
Manufacturer / Brand:Infineon Technologies
Brief Description:MOSFET N-CH 80V TO263-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IPB049N08N5
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IPB049N08N5ATMA1
In stock: 76463000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IPB049N08N5ATMA1 online

US$ 0.982

Reference Marketing Price: US$ 0.982

Our Best Price: N/A (Email us)

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Multiples:1

1000+:
$0.982
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Product Parameter

Vgs(th) (Max) @ Id 3.8V @ 66µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 80A, 10V
Power Dissipation (Max) 125W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SP001227052
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Manufacturer Part Number IPB049N08N5ATMA1
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 80V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Drain to Source Voltage (Vdss) 80V
Description MOSFET N-CH 80V TO263-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

Others

Other Names SP001227052
Standard Package 1,000

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