IPB80N06S2LH5ATMA4

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IPB80N06S2LH5ATMA4

EXSHINE Part Number:EX-IPB80N06S2LH5ATMA4
Manufacturer Part Number:IPB80N06S2LH5ATMA4
Manufacturer / Brand:Infineon Technologies
Brief Description:MOSFET N-CH 55V 80A TO263-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IPB,IPP80N06S2L-H5
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IPB80N06S2LH5ATMA4
In stock: 52130 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IPB80N06S2LH5ATMA4 online

US$ 1.046

Reference Marketing Price: US$ 1.046

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1000+:
$1.046
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Product Parameter

Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 80A, 10V
Power Dissipation (Max) 300W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SP001058126
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Manufacturer Part Number IPB80N06S2LH5ATMA4
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Drain to Source Voltage (Vdss) 55V
Description MOSFET N-CH 55V 80A TO263-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

Others

Standard Package 1,000
Other Names SP001058126

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