IPD096N08N3GBTMA1

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IPD096N08N3GBTMA1

EXSHINE Part Number:EX-IPD096N08N3GBTMA1
Manufacturer Part Number:IPD096N08N3GBTMA1
Manufacturer / Brand:Infineon Technologies
Brief Description:MOSFET N-CH 80V 73A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IPD096N08N3 G
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Weight:-
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Real Time Availability for
IPD096N08N3GBTMA1
In stock: 74771 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Vgs(th) (Max) @ Id 3.5V @ 46µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 9.6 mOhm @ 46A, 10V
Power Dissipation (Max) 100W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD096N08N3 G
IPD096N08N3 G-ND
SP000474196
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IPD096N08N3GBTMA1
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 80V 73A (Tc) 100W (Tc) Surface Mount PG-TO252-3
Drain to Source Voltage (Vdss) 80V
Description MOSFET N-CH 80V 73A TO252-3
Current - Continuous Drain (Id) @ 25°C 73A (Tc)

Others

Other Names IPD096N08N3 G

IPD096N08N3 G-ND

SP000474196
Standard Package 2,500

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