IPD200N15N3GBTMA1

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IPD200N15N3GBTMA1

EXSHINE Part Number:EX-IPD200N15N3GBTMA1
Manufacturer Part Number:IPD200N15N3GBTMA1
Manufacturer / Brand:Infineon Technologies
Brief Description:MOSFET N-CH 150V 50A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IPx200N15N3 G
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IPD200N15N3GBTMA1
In stock: 43855 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Vgs(th) (Max) @ Id 4V @ 90µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 20 mOhm @ 50A, 10V
Power Dissipation (Max) 150W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD200N15N3 G
IPD200N15N3 G-ND
IPD200N15N3 GTR
IPD200N15N3 GTR-ND
IPD200N15N3G
SP000386665
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IPD200N15N3GBTMA1
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3
Drain to Source Voltage (Vdss) 150V
Description MOSFET N-CH 150V 50A TO252-3
Current - Continuous Drain (Id) @ 25°C 50A (Tc)

Others

Standard Package 2,500
Other Names IPD200N15N3 G

IPD200N15N3 G-ND

IPD200N15N3 GTR

IPD200N15N3 GTR-ND

IPD200N15N3G

SP000386665

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