RF2374TR7

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RF2374TR7

EXSHINE Part Number:EX-RF2374TR7
Manufacturer Part Number:RF2374TR7
Manufacturer / Brand:RFMD
Brief Description:IC AMP HBT GAAS LNA BYPASS 8-QFN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RF2374
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RF2374TR7
In stock: 19736000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order RF2374TR7 online

US$ 0.675

Reference Marketing Price: US$ 0.675

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

2500+:
$0.675
5000+:
$0.65
12500+:
$0.625
  • Description
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Product Parameter

Voltage - Supply 1.8 V ~ 4 V
Test Frequency 2.3GHz ~ 2.7MHz
Supplier Device Package 8-QFN (2.2x2.2)
Series -
RF Type ISM
Packaging Tape & Reel (TR)
Package / Case 8-QFN
P1dB 0dBm (1mW)
Other Names 2374
689-1012-2
Noise Figure 1.3dB ~ 1.5dB
Moisture Sensitivity Level (MSL) 2 (1 Year)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number RF2374TR7
Gain 13.5dB ~ 14.5dB
Frequency 800MHz ~ 3.8GHz
Expanded Description RF Amplifier IC ISM 800MHz ~ 3.8GHz 8-QFN (2.2x2.2)
Description IC AMP HBT GAAS LNA BYPASS 8-QFN
Current - Supply 7mA

Others

Other Names 2374

689-1012-2
Standard Package 2,500

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Distributor of RFMD

- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications.
All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.

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