RF5110GTR7

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RF5110GTR7

EXSHINE Part Number:EX-RF5110GTR7
Manufacturer Part Number:RF5110GTR7
Manufacturer / Brand:RFMD
Brief Description:IC GSM POWER AMP 3V 16-QFN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RF5110G
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RF5110GTR7
In stock: 67630 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 3.367

Reference Marketing Price: US$ 3.367

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Multiples:1

2500+:
$3.367
  • Description
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Product Parameter

Voltage - Supply 2.7 V ~ 4.8 V
Test Frequency -
Supplier Device Package 16-QFN (3x3)
Series -
RF Type GSM, GPRS
Packaging Tape & Reel (TR)
Package / Case 16-VFQFN Exposed Pad
P1dB -
Other Names 5110G
689-1030-2
Noise Figure -
Moisture Sensitivity Level (MSL) 2 (1 Year)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number RF5110GTR7
Gain 32dB
Frequency 800MHz ~ 950MHz
Expanded Description RF Amplifier IC GSM, GPRS 800MHz ~ 950MHz 16-QFN (3x3)
Description IC GSM POWER AMP 3V 16-QFN
Current - Supply 15mA ~ 335mA

Others

Standard Package 2,500
Other Names 5110G

689-1030-2

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Distributor of RFMD

- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications.
All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.

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