RFFC2072TR7

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RFFC2072TR7

EXSHINE Part Number:EX-RFFC2072TR7
Manufacturer Part Number:RFFC2072TR7
Manufacturer / Brand:RFMD
Brief Description:IC SYNTH VCO MIXER 2.7GHZ 32-QFN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RFFC2071,72
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RFFC2072TR7
In stock: 39610 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order RFFC2072TR7 online

US$ 7.121

Reference Marketing Price: US$ 7.121

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

750+:
$7.121
  • Description
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Product Parameter

Supplier Device Package 32-QFN Exposed Pad (5x5)
Series -
Secondary Attributes -
RF Type General Purpose
Packaging Tape & Reel (TR)
Package / Case 32-VFQFN Exposed Pad
Other Names 689-1081-2
RFFC2072
Moisture Sensitivity Level (MSL) 2 (1 Year)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number RFFC2072TR7
Function Mixer, Synthesizer, VCO
Frequency 85MHz ~ 2.7GHz
Expanded Description RF IC Mixer, Synthesizer, VCO General Purpose 85MHz ~ 2.7GHz 32-QFN Exposed Pad (5x5)
Description IC SYNTH VCO MIXER 2.7GHZ 32-QFN

Others

Other Names 689-1081-2

RFFC2072
Standard Package 750

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Distributor of RFMD

- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications.
All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.

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