RFHA1006SR

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RFHA1006SR

EXSHINE Part Number:EX-RFHA1006SR
Manufacturer Part Number:RFHA1006SR
Manufacturer / Brand:RFMD
Brief Description:RF AMP 9W 1.215GHZ
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RFHA1006SR
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RFHA1006SR
In stock: 9980 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order RFHA1006SR online

US$ 114.41

Reference Marketing Price: US$ 114.41

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$114.41
10+:
$107.258
25+:
$102.252
  • Description
  • Payment
  • Shipping
  • Packaging

Product Parameter

Voltage - Supply -
Test Frequency 300MHz
Supplier Device Package 8-LCC, SO8
Series -
RF Type General Purpose
Packaging Cut Tape (CT)
Package / Case 8-CLCC
P1dB -
Other Names 689-1118
689-1118-1
689-1118-ND
Noise Figure -
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number RFHA1006SR
Gain 16.6dB
Frequency 225MHz ~ 1.215GHz
Expanded Description RF Amplifier IC General Purpose 225MHz ~ 1.215GHz 8-LCC, SO8
Description RF AMP 9W 1.215GHZ
Current - Supply -

Others

Other Names 689-1118

689-1118-1

689-1118-ND
Standard Package 1

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Distributor of RFMD

- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications.
All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.

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