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RFPA3809SR
| EXSHINE Part Number: | EX-RFPA3809SR |
|---|---|
| Manufacturer Part Number: | RFPA3809SR |
| Manufacturer / Brand: | RFMD |
| Brief Description: | RFPA3809SR RFMD SMD or Through Hole new date code and low price |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | RFPA3809SR |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
In stock: 72971 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Voltage | - |
|---|---|
| Series | RFPA380 |
| Package Type | SMD or Through Hole |
| Operating Temperature | - |
| Mounting Type | - |
| Moisture Sensitivity Level (MSL) | 1 |
| MFG Part Code | RFPA3809SR |
| Features | - |
| Dimension | - |
| Delivery Time | 1 Day |
| Date Code | New |
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T/T (Bank Transfer) Receiving: 1-4 days. |
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Paypal Receiving: immediately. |
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Western Union Receiving: 1-2 hours. |
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MoneyGram Receiving: 1-2 hours. |
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Alipay Receiving: immediately. |
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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Distributor of RFMD
- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications.
All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.